Daniel G. Swanson, Jr.

Daniel G. Swanson, Jr., Advanced Development Group, Forem USA, Amesbury, Massachusetts, USA. Mr. Swanson received his BSEE degree from the University of Illinois and his MSEE degree from the University of Michigan. He has designed broadband amplifiers, various types of oscillators, thin-film filters and high Q cavity filters for both military and commercial applications.

In his current position, he is applying electromagnetic field-solvers to RF and digital design problems that range from wireless frequencies to millimeter-waves. Dan also teaches a continuing education course on the application of field-solvers to RF and high-speed digital design problems. Mr. Swanson is a Fellow of the IEEE and has served the MTT Society in many capacities.